| 摘要 |
A method for forming a Metal-Insulator-Metal capacitor of a semiconductor device includes forming an insulation layer, a lower conductive layer, a dielectric layer and an upper conductive layer on a semiconductor substrate; forming, on the upper conductive layer, a protective insulation layer wherein an etching selectivity of the lower conductive layer to the protective insulation layer is high, patterning the upper conductive layer to form an upper electrode, patterning the lower conductive layer to form a lower electrode, depositing and planarizing an insulation layer, forming a via contact, and forming a metal wiring layer. Therefore, a process margin in the follow-up etching process is increased although the photosensitive film is reduced in its thickness.
|
