| 摘要 |
889,782. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Aug. 8, 1960 [Aug. 11, 1959], No. 27401/60. Class 37. In a method in which a conductor is secured to a semi-conductor crystal by thermo-pressure, i.e. by pressure and heating to between 100‹ C. and the eutectic temperature of the conductor and the semi-conductor, the crystal is first soldered in position on a carrier plate. The pressure may be between 350 and 700 kgms/cm.<2>. Fig. 2 shows a silicon crystal wafer 1 soldered by a layer 3 comprising tin and antimony to a nickel carrier plate 2. An aluminium wire 6 is pressed on to the silicon in hydrogen, by die 7 while the whole is heated to 325‹ C. by element 5. Fig. 3 shows the final form of the device, and the invention is applicable to diodes, transistors and photo-electric arrangements. |
