| 摘要 |
The present invention, in one aspect, provides an integrated circuit that comprises a first region of transistors having gate structures with a low dopant concentration, and a second region of transistors having gate structures with a dopant concentration substantially higher than the gate structures of the first region, and wherein the transistors in the first region comprise a substantial portion of the integrated circuit. The transistors may include a resistor region located between an upper portion of the gate and the gate dielectric.
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