发明名称 Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate
摘要 <p>A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different.orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.</p>
申请公布号 EP1867760(A2) 申请公布日期 2007.12.19
申请号 EP20070019343 申请日期 2006.03.23
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 MEGURO, KIICHI;YAMAMOTO, YOSHIYUKI;IMAI, TAKAHIRO
分类号 C30B29/04;C30B25/02 主分类号 C30B29/04
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