Low-impurity organosilicon product as precursor for CVD

摘要

An organosilicon composition, suitable for use in a chemical vapor deposition process for forming interlayer dielectrics, comprises an organosilicon, preferably an alkoxysilane such as diethoxymethylsilane. The composition also contains a concentration of a dissolved residual chloride, derived from the chlorosilane precursor used to create the organosilicon, and a concentration of a dissolved residual chloride scavenger, added to reduce the residual chloride content in the composition. The concentrations of residual chloride and residual chloride scavenger are below a level necessary to limit the risk of an unwanted chloride salt precipitate forming on combination of the organosilicon composition with another organosilicon composition.