发明名称 |
Quasi self-aligned source/drain FinFET process |
摘要 |
A method of forming a semiconductor structure including a plurality of finFFET devices in which crossing masks are employed in providing a rectangular patterns to define relatively thin Fins along with a chemical oxide removal (COR) process is provided. The present method further includes a step of merging adjacent Fins by the use of a selective silicon-containing material. The present invention also relates to the resultant semiconductor structure that is formed utilizing the method of the present invention.
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申请公布号 |
US7309626(B2) |
申请公布日期 |
2007.12.18 |
申请号 |
US20050164215 |
申请日期 |
2005.11.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
IEONG MEI-KEI;LUDWIG THOMAS;NOWAK EDWARD J.;OUYANG QIQING C. |
分类号 |
H01L21/00;H01L21/338 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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