发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 There is a bridge circuit which is driven by a constant-current including a thermistor. The bridge circuit is constituted by strain gages defined by P-type diffused layers. Strain gages which constitute in combination the bridge circuit are defined by diffused resistor layers having a surface impurity concentration which is set so as to fall within the range from 2.3x1018 to 2.5x1018 atoms/cm3. The B constant of the thermistor is selected so as to fall within the range from 1400K to 2400K.
申请公布号 GB8717779(D0) 申请公布日期 1987.09.03
申请号 GB19870017779 申请日期 1987.07.27
申请人 HITACHI LTD 发明人
分类号 H01L29/84;G01L9/00;G01L9/04;G01L9/06 主分类号 H01L29/84
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