发明名称 Shielded monolithic microplasma source for prevention of continuous thin film formation
摘要 A monolithic microplasma source includes a dielectric substrate having an outer surface that is exposed to a time varying electric field. A gap layer is positioned on an inner surface of the dielectric substrate. A shield including a slit is positioned on the gap layer. A relief structure is formed in at least one of the gap layer and the dielectric substrate. The dimensions of the gap layer, the slit in the shield, and the relief structure are chosen so as to prevent a formation of a continuous film across the relief structure. A chamber containing a gas is positioned adjacent to the shield so that the gas is ionized to form a microplasma when an electric field is induced in the chamber by the incident time varying electric field.
申请公布号 US7309842(B1) 申请公布日期 2007.12.18
申请号 US20050907024 申请日期 2005.03.16
申请人 VERIONIX INCORPORATED 发明人 DOUGHTY FRANK C.
分类号 C23F13/00;C23C14/04 主分类号 C23F13/00
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