| 摘要 |
PURPOSE:To obtain a high-speed, high-density, large-scale and general-purpose device by providing a current leakage path between drain and source regions in the semiconductor substrate surface near the edge of the channel region constituting a MOS memory. CONSTITUTION:Poly-crystal Si gate electrode 102 is provided across the surface of active region 101, and drain region 103 and source region 104 are provided in both sides of electrode 102, and leakage current path 105 is provided while being positioned at the edge of gate electrode 102. Next, Al electrode leading-out lines 106 to 108 are fitted to electrode 102, region 103 and region 104 respectively to make a MOS memory. Thus, the circuit has a constitution where N channel enhancement- type MOS transistor Q and resistance RL of the two-terminal coupling to the drain and the source exist, and as a result, this circuit having only one MOS transistor is equivalent to a circuit where two elements are combined, and density is impeoved. |
