| 摘要 |
<p>A tunneling effect thin film transistor, a method of manufacturing the same, and an organic electro-luminescence display using the same are provided to control the amount of current by inserting a thin insulating film between one electrode of a first and second electrodes and a semiconductor film. A semiconductor film(20) is overlaid between a gate electrode(12) and a first insulating film(14). A first electrode(16) and a second electrode(24) are formed on different layers and use the semiconductor film as a channel. A second insulating film(18) is formed between the semiconductor film and one electrode of the first and second electrodes in order to obtain an electron tunneling effect. A first impurity semiconductor film(22) is formed between the other electrode of the first and second electrodes and the semiconductor film. The first and second electrodes are overlaid on each other.</p> |
