PLASMA PROCESSING APPARATUS OF USING NEUTRAL BEAM

摘要

Plasma process equipment using neutral beam is provided to uniformly etch a thin film deposited on a wafer by extending the diameter of a hollow formed at an edge of a grid or increasing the number of the hollows. A wafer chuck is arranged in a chamber. A wafer to be etched is received on the wafer chuck. A gas supplying unit supplies source gas into the chamber. A coil antenna is prepared on an upper portion of the chamber to generate plasma using the source gas supplied into the chamber. Plural hollows(155) are formed on a grid(150) to extract ion from the plasma in the chamber. A reflective body changes the ion extracted by the grid into a neutral beam. A hollow(157) formed at an edge out of the hollows formed on the grid has a larger diameter than a hollow(156) formed at a central part of the grid.