BEAM PROCESSING SYSTEM AND BEAM PROCESSING METHOD

摘要

A beam processing system and a beam processing method are provided to irradiate beam uniformly to a processing object even though a rotation disk is rotated slowly. An ion implanting system includes a guide chamber(12) for guiding ion beam, a wafer chamber(13) for implanting the ion beam from the guide chamber into a wafer(110). The rotation disk is installed within the wafer chamber, and is rotated by a rapid scan driving unit(16) to scan the wafer into a vertical direction. The wafer is scanned slowly into a radiation direction by a slow scan driving unit(17). Thus, the ion is implanted uniformly into the wafer entirely.