发明名称 Internal voltage generator for use in semiconductor memory device
摘要 An internal voltage generator stably supplies an internal voltage in a semiconductor device. The internal voltage generator includes: a first internal voltage generating means for supplying a first internal voltage which has a level corresponding to a first reference voltage using an external voltage; a second internal voltage generating means for supplying a second internal voltage which has a level corresponding to a second reference voltage using the external voltage; and a third internal voltage generating means for supplying a third internal voltage which has a level corresponding to a third reference voltage generated based on the first internal voltage, using the second internal voltage as a power source.
申请公布号 US2007280008(A1) 申请公布日期 2007.12.06
申请号 US20060647401 申请日期 2006.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BYEON SANG-JIN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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