发明名称 CLEANING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To more efficiently remove the oxide film formed on the surface of an object to be treated than before. <P>SOLUTION: In a cleaning apparatus 10, hydrogen plasma is generated in a plasma emission chamber 38 in a chamber 12. Then, only the hydrogen radical contained in the hydrogen plasma passes through a shielding plate 36 to a treatment chamber 40. In the treatment chamber 40, the objects to be treated 18 installed on a supporting base 14 are heated by a resistance heater 20, and the oxide films formed on the surfaces of the objects 18 and the hydrogen radical react with each other to reduce and remove the oxide films. Further, vibration is applied to the objects 18 from an ultrasonic vibrator 24 through the supporting base 14 and a coupling rod 22. Thus, the hydrogen radical easily reaches every part of the objects 18, and the reaction of the hydrogen radical and the oxide film is activated. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317908(A) 申请公布日期 2007.12.06
申请号 JP20060146371 申请日期 2006.05.26
申请人 SHINKO SEIKI CO LTD;ONO TAKAHIDE 发明人 ONO TAKAHIDE;HIRAKAWA DAISUKE;SUENAGA MAKOTO;TAKEUCHI TATSUYA;HAGIWARA TAIZO;NAKANO YOSHIMASA
分类号 H01L21/302;B08B6/00;B23K1/20;B23K101/42;H05H1/46 主分类号 H01L21/302
代理机构 代理人
主权项
地址