| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent exfoliation between insulating films in a semiconductor device where two layers of insulating film composed of a low dielectric constant material such as BCB and two layers of interconnection are laminated alternately on a silicon substrate. <P>SOLUTION: On the upper surface of a passivation film 3 of silicon oxide, or the like, which is provided on the upper surface of a silicon substrate 1 excepting the peripheral part thereof, first and second insulating films 5 and 9 and first and second interconnections 8 and 12 formed of the low dielectric constant material such as BCB and the like are laminated alternately. Upper surface of the second insulating film 9 including the second interconnection 12 and the side face of the first and second insulating films 5 and 9 are covered with a sealing film 14 of epoxy-based resin, or the like. With such an arrangement, exfoliation can be prevented between the first and second insulating films 5 and 9. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
