| 摘要 |
<p>The invention relates to a microlithography projection lens for wavelengths <= 248 nm <=, preferably <= 193 mm, in particular EUV lithography for wavelengths ranging from 1-30 nm for imaging an object field in an object plane onto an image field in an image plane, the microlithography projection lens developed in such a manner that provision is made for an accessible diaphragm plane, into which for instance an iris diaphragm can be introduced.</p> |
