| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve mass-production of a semiconductor laminate provided with a p-type nitride-based semiconductor layer having a low resistance and excellent uniformity of in-plane resistivity, particularly to achieve mass-production of a nitride-based semiconductor light emitting element. <P>SOLUTION: In the method for processing a semiconductor laminate, the processing with liquid is conducted under the temperature condition of 50°C or higher but lower than 400°C to the semiconductor laminate formed through growth of a plurality of nitride-based semiconductor layers on a substrate. Moreover, the semiconductor laminate is subjected to the processing with the liquid and the method for manufacturing nitride-based semiconductor light emitting element also includes a step of the processing with the liquid. <P>COPYRIGHT: (C)2008,JPO&INPIT |
