ELECTROSTATIC BEAM DEFLECTION SCANNER AND BEAM DEFLECTION SCANNING METHOD

摘要

An electrostatic beam deflection scanner and a beam deflection scanning method are provided to improve the uniformity of implanting ions in a scan direction by restricting the zero electric field effect of an electrostatic beam deflection scanner. A pair of scanning electrodes(21A,21B) are arranged to be opposed to each other with the beam trajectory interposed therebetween. A pair of electric field correction electrodes(27,28) are arranged to extend in a direction perpendicular to an opposing direction of the pair of scanning electrodes and such that the beam trajectory is interposed therebetween. A positive and a negative potential are applied alternately to the scanning electrodes, and a correction voltage is constantly applied to the electric field correction electrodes. A correction electric field generated from the electric field correction electrodes is added to the beam passing between the scanning electrodes at the time of switching between the positive and the negative potential.