| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device wherein resistance to radiation can be reinforced. SOLUTION: In a p-channel transistor P1, a source and a back gate are connected to power supply, a gate is connected to an input terminal IN, and drain is connected to an output terminal OUT. In an n-channel transistor N1, a source and a back gate are earthed, a gate is connected to the input terminal IN, and drain is connected to the output terminal OUT. In a diode D1, a cathode is connected to power supply, and an anode is connected to the output terminal OUT. In a diode D2, a cathode is connected to the output terminal OUT and an anode is earthed. When viewed from the vertical direction of a substrate where an inverter circuit is formed, the circuit is formed so that the projection face of an area of a p<SP>+</SP>diffused layer 32 of the diode D1 may include the projection face of an area of an n<SP>+</SP>diffused layer 24 of the n-channel transistor N1, and the projection face of an area of an n<SP>+</SP>diffused layer 41 of the diode D2 may include the projection face of an area of a p<SP>+</SP>diffused layer 14 of the p-channel transistor P1. COPYRIGHT: (C)2008,JPO&INPIT |
