| 摘要 |
A method of forming an integrated circuit transistor ( 50 ). The method provides a first semiconductor region ( 52 ) and forms ( 110 ) a gate structure ( 54 <SUB>x</SUB>) in a fixed position relative to the first semiconductor region. The gate structure has a first sidewall and a second sidewall ( 59 <SUB>x</SUB>). The method also forms at least a first layer ( 58 <SUB>x</SUB> , 60 <SUB>x</SUB>) adjacent the first sidewall and the second sidewall. The method also forms ( 120 ) at least one recess ( 62 <SUB>x</SUB>) in the first semiconductor region and extending laterally outward from the gate structure. Additional steps in the method are first, oxidizing ( 130 ) the at least one recess such that an oxidized material is formed therein, second, stripping ( 140 ) at least a portion of the oxidized material, and third, forming ( 160 ) a second semiconductor region ( 66 <SUB>x</SUB>) in the at least one recess.
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