发明名称 |
METHOD FOR FORMING METAL COMPOUND LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR FORMING METAL COMPOUND LAYER |
摘要 |
<p>Disclosed is a method for forming a metal compound layer, which comprises a step for preparing, in a chamber, a substrate wherein a semiconductor material composed of silicon, germanium or silicon-germanium is exposed in the surface; and a metal compound layer forming step wherein a raw material gas containing a metal which is capable of forming a metal compound with the semiconductor material is supplied into the chamber and the substrate is heated to a temperature at which the raw material gas is thermally decomposed, thereby reacting the metal with the semiconductor material and forming a metal compound layer under such conditions that the metal does not deposit on the substrate. Also disclosed is a method for manufacturing a semiconductor device, which utilizes this method for forming a metal compound layer.</p> |
申请公布号 |
WO2007139041(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
WO2007JP60745 |
申请日期 |
2007.05.21 |
申请人 |
NEC CORPORATION;NAKAGAWA, TAKASHI;TATSUMI, TORU;OSHIDA, MAKIKO;IKARASHI, NOBUYUKI;TAKAHASHI, KENSUKE;MANABE, KENZO |
发明人 |
NAKAGAWA, TAKASHI;TATSUMI, TORU;OSHIDA, MAKIKO;IKARASHI, NOBUYUKI;TAKAHASHI, KENSUKE;MANABE, KENZO |
分类号 |
H01L21/285;C23C16/06;C23C16/42;H01L21/28;H01L21/336;H01L29/78 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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