| 摘要 |
PROBLEM TO BE SOLVED: To avoid the characteristic deterioration and the reliability reduction of a broadcast device even with the isolation trench width reduced. SOLUTION: The semiconductor device comprises a substrate composed of a second silicon substrate 3 laminated through a silicon oxide film 2 on a first silicon substrate 1, element forming regions R1 having elements (gate electrodes 14a, source/drain regions 17) formed thereon, substrate contacting opening regions R3 having substrate contact openings 9, isolation trench regions R2 having isolation trenches 8 for isolating the elements on the second silicon substrate 3, a silicon oxide film 10 formed on the surfaces of the isolation trenches 8, a polysilicon 11 filled in the isolation trenches 8, base holes 22 piercing the silicon oxide films 2, 18 of substrate contacting openings regions R3 to reach the first silicon substrate 1, and a wiring layer 25 connected to the first a silicon substrate 1 in the base holes 22. COPYRIGHT: (C)2008,JPO&INPIT
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