| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing contact resistance without a problem of a drop in withstand voltage or the like when an epitaxial structure equipped with a GaN cap layer is used in a HEMT employing a nitride semiconductor, and to provide its manufacturing method. SOLUTION: In the semiconductor device; an electron supply layer 2 containing a layer made of Al<SB>z</SB>Ga<SB>1-z</SB>N (0≤z≤1) and the GaN cap layer 3 are formed on a channel layer 1 containing a layer made of Al<SB>x</SB>In<SB>y</SB>Ga<SB>1-x-y</SB>N (0≤x<1 and 0≤y<1), and a band gap of the channel layer 1 is smaller than that of the electron supply layer 2. The device comprises a hetero junction HEMT using a nitride semiconductor in which the channel layer 1 and the electron supply layer 2 are joined in hetero junction. An n-type region 4 with an impurity concentration of 1×10<SP>18</SP>cm<SP>-3</SP>or larger is formed to a depth reaching the channel layer 1 on a partial region other than a gate electrode 10 formation region, and a source electrode 6 and a drain electrode 7 are formed to cover part of the n-type region 4. COPYRIGHT: (C)2008,JPO&INPIT
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