发明名称 |
Process including silo-chloro passivation for etching tungsten silicide overlying polysilicon |
摘要 |
A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant include NF<SUB>3 </SUB>and Cl<SUB>2</SUB>. Argon is added to prevent undercutting at the dense/iso interface. Oxygen and nitrogen oxidize any exposed silicon to increase etch selectivity and straightens the etch profile. SiCl<SUB>4 </SUB>as an example of a silicon and chlorine containing passivating gas may be added for additional selectivity.
|
申请公布号 |
US2007281479(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20060513455 |
申请日期 |
2006.08.31 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LEE KYEONG-TAE;CHOI JINHAN;JANG BI;DESHMUKH SHASHANK C.;SHEN MEIHUA;LILL THORSTEN B.;YU JAE BUM |
分类号 |
C23F1/00;H01L21/302 |
主分类号 |
C23F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|