| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which does not apply a thermal damage to a lower layer wiring formed previously, and can remove a water content or etching gas component coupled to a film of a low dielectric constant after etching. SOLUTION: After an organic insulating film 3 and an inorganic insulating film 4 formed on a semiconductor substrate 1 are etched and a wiring groove 5a is formed, a damage component coupled to surfaces of insulating films 3, 4 by the etching is removed by an electron beam EB irradiation and ultraviolet ray UV irradiation. The irradiation of electron beams EB or ultraviolet rays UV is performed while the semiconductor substrate is heated in an inorganic atmosphere. It is performed in an atmosphere to which a restoration gas G is added such as a carbon based gas or silane based gas. COPYRIGHT: (C)2008,JPO&INPIT
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