NONVOLATILE MEMORY ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT

摘要

A nonvolatile memory element is formed by a variable-resistance section and MISFET for memory selection connected in series to the variable-resistance section. The variable-resistance section includes: a thin film (tantalum pentoxide film (20)) formed by a strongly correlated electron-based material in which the outermost orbital is formed by a d electron or f electron; a first electrode (electrode (21)) in ohmic contact with one surface of the thin film; and a second electrode (plug (19)) in non-ohmic contact with the other surface of the thin film. Information is stored according to the intensity of the electric resistance value at the boundary between the thin film formed by the strongly correlated electron-based material and the second electrode. As the strongly correlated electron-based material and the electrode material, a material already used in the existing silicon process or a material which can be easily introduced can be used.