METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent an SAC(Self Aligned Contact) fail and to improve device characteristic by forming a rounded trench and then a second spacer on an upper of a first spacer and on a sidewall of the rounded trench. A recess gate(102) is formed on a semiconductor substrate(100). A first spacer(104) is formed on a sidewall of the recess gate. The semiconductor substrate of a landing plug contact forming region is etched to form a rounded trench(106). A second spacer(108) is formed on an upper portion of the first spacer and on a sidewall of the rounded trench. An interlayer dielectric(110) is formed on an upper portion of the entire surface. The interlayer dielectric is selectively etched to form a landing plug contact hole. A conductive layer is gap-filled into the landing plug contact hole to form a landing plug(112). A thickness of the first spacer is 50-100 Å.