| 摘要 |
<p>A pixel for picking-up an image signal and its manufacturing method are provided to restrain generation of a cross-talk by using a trench gap-filled with an insulator for preventing electrons generated by the image signal from being transferred to an adjacent pixel. A photo diode(PD) is formed on an upper of a substrate(SUB). A P-type diffusion area(P) and an N-type diffusion region(N) are junctioned in upper and lower directions to configure the photo diode. A pass transistor is formed on an upper of the substrate. A terminal of the pass transistor becomes the P-type diffusion region and the N-type diffusion region, and the other terminal of the pass transistor becomes a floating diffusion area(FD). A gate terminal of the pass transistor is located between the terminals. A peripheral of a pixel is surrounded by a trench passing through the substrate. The trench is gap-filled with an insulator.</p> |
