发明名称 |
Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugs |
摘要 |
A MIM capacitor can include a doped polysilicon contact plug in an interlayer insulating film. A lower electrode of the MIM capacitor includes a transition metal nitride film is on the doped polysilicon contact plug. A transition metal silicide film is between the doped polysilicon contact plug and the transition metal nitride film.
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申请公布号 |
US7304367(B2) |
申请公布日期 |
2007.12.04 |
申请号 |
US20040870745 |
申请日期 |
2004.06.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JAE-HYOUNG;CHUNG JUNG-HEE;YOO CHA-YOUNG;CHO NAM-MYUN;CHOI JEONG-SIK;OH SE-HOON;PARK DONG-KYUN |
分类号 |
H01L27/108;H01L29/00;H01L21/02 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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