发明名称 Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugs
摘要 A MIM capacitor can include a doped polysilicon contact plug in an interlayer insulating film. A lower electrode of the MIM capacitor includes a transition metal nitride film is on the doped polysilicon contact plug. A transition metal silicide film is between the doped polysilicon contact plug and the transition metal nitride film.
申请公布号 US7304367(B2) 申请公布日期 2007.12.04
申请号 US20040870745 申请日期 2004.06.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JAE-HYOUNG;CHUNG JUNG-HEE;YOO CHA-YOUNG;CHO NAM-MYUN;CHOI JEONG-SIK;OH SE-HOON;PARK DONG-KYUN
分类号 H01L27/108;H01L29/00;H01L21/02 主分类号 H01L27/108
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