| 发明名称 |
Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device |
| 摘要 |
A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O<SUB>3 </SUB>ferroelectric which includes at least four-fold coordinated Si<SUP>4+</SUP> or Ge<SUP>4+</SUP> in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.
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| 申请公布号 |
US7303828(B2) |
申请公布日期 |
2007.12.04 |
| 申请号 |
US20040807427 |
申请日期 |
2004.03.24 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KIJIMA TAKESHI;MIYAZAWA HIROMU;HAMADA YASUAKI;NATORI EIJI |
| 分类号 |
B32B9/00;B41J2/045;B41J2/055;B41J2/16;C04B35/00;C04B35/46;C04B35/49;C23C18/12;C23C30/00;C30B5/00;C30B29/30;C30B29/32;H01L21/316;H01L21/8246;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;H01L41/08;H01L41/09;H01L41/187;H01L41/24 |
主分类号 |
B32B9/00 |
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