发明名称 OPTICAL SEMICONDUCTOR DEVICE WITH SENSITIVITY IMPROVED
摘要 <p>An optical semiconductor device with improved sensitivity is provided to improve sensitivity by producing an inexpensive light receiving element. An optical semiconductor device includes a first conductive type first semiconductor layer and a second conductive type channel layer formed on a surface of the first semiconductor layer in a light receiving region. The first semiconductor layer is formed as a p-n junction within the channel layer and the light receiving region. The optical semiconductor device further includes a second conductive type second semiconductor layer, and a light transmissible insulating film formed on the first semiconductor layer within the light receiving region. The channel region is formed on the surface region of the first semiconductor layer under the light transmissible insulating film when a reverse bias is applied between the first and second semiconductor layers.</p>
申请公布号 KR20070114652(A) 申请公布日期 2007.12.04
申请号 KR20070051394 申请日期 2007.05.28
申请人 NEC ELECTRONICS CORPORATION 发明人 IWAI TAKESHI
分类号 H01L31/12 主分类号 H01L31/12
代理机构 代理人
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