| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent an overlap of a doping region due to a cell channel ion implantation process and a junction region due to a subsequent source/drain ion implantation process by staying a pad nitride layer used in an isolation process. An isolation layer(34) is formed on a semiconductor substrate(31) by using a pad dielectric for isolation. A pad oxide layer and a pad nitride layer are sequentially formed on the semiconductor substrate. The pad oxide layer and the pad nitride layer are patterned. The exposed substrate is etched to form a trench for isolation. A dielectric is formed on the entire surface of the substrate including the trench. The dielectric is planarized until the pad nitride layer is exposed. A hard mask pattern for a recess is formed on an upper portion of the entire structure of the substrate including the pad dielectric. The pad dielectric and the substrate are etched by using the hard mask pattern as a mask to form a predetermined recess pattern. A cell channel ion implantation process is performed on the etched pad dielectric with an ion implantation barrier to form a local channel region(320). A gate pattern(38) is formed on the predetermined recess pattern.</p> |
