| 摘要 |
A semiconductor device is provided to improve a gap-fill characteristic of a process for forming an isolation layer, by forming an isolation layer having a stack structure of first and second isolation layers, by minimizing the size of a first active region defined by the first isolation layer and by forming a single crystal epitaxial growth layer as a second active region extended to a portion on the first active region. A first active region(120) of a quadrilateral pillar type is disposed as an island type in a silicon substrate(110). A first isolation layer(135) planarizes the silicon substrate, filling a gap between the first active regions of the silicon substrate. A second active region(160) of a bar type is made of an epitaxial growth layer overlapping the first active region on the first isolation layer. A second isolation layer fills a gap between the second active regions. A gate(200) can be formed on the second active region and the second isolation layer, positioned in a direction vertical to the lengthwise direction of the second active region.
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