| 摘要 |
A method for manufacturing a semiconductor device is provided to reduce a contact open defect and a self-aligned contact defect by forming a recess gate after forming a region where a landing plug contact is to be formed. A recess mask is formed on a predetermined region of a semiconductor substrate(21). The semiconductor substrate exposed by the recess mask is etched to form a recess(27). Both sidewalls of the recess mask is recessed so that a line width between neighboring recess masks is increased. A contact mask(28) is formed to gap-fill the space between the neighboring recess masks including the recess. The recess mask is removed. A groove is formed within the semiconductor substrate between the recesses exposed by the contact mask. The contact mask is removed. A gate is formed on the recess.
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