FILM-FORMING METHOD OF CRYSTALLINE ITO THIN FILM, CRYSTALLINE ITO THIN FILM, AND FILM, AS WELL AS RESISTANCE FILM TYPE TOUCH PANEL

摘要

PROBLEM TO BE SOLVED: To provide a film-forming method to form a crystalline ITO thin film 12 on a low-temperature or non-heated substrate 11 in a single cathode pulse sputtering method or dual cathode pulse sputtering method.

SOLUTION: This is the film-forming method of a crystalline ITO thin film in which the duty ratio of impressing power impressed on a target electrode is made 60% or less in the film-forming method of ITO thin film by a single cathode pulse sputtering method, or the duty ratio of the impressing power impressed respectively on two target electrodes is made 40% or less in the ITO thin film forming method by dual cathode pulse sputtering method.

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