METHOD FOR POLISHING CONTROL OF A CHEMICAL MECHANICAL POLISHING DEVICE

摘要

A polishing method of a CMP apparatus is provided to compensate for a polishing deflection caused by deterioration of consumables like a polishing pad by correcting a ratio of a first polishing time interval to a second polishing time interval after a predetermined number of wafers are polished. While a polishing layer formed on a wafer is polished by using a CMP apparatus, a first recipe of a first polishing step and a second recipe of a second polishing step are prepared in a manner that the polishing removal quantities of the polishing layer in a plurality of region of the wafer are offset and the thickness profiles can be uniform after the polishing process(S610). The polishing layer can be a metal layer including an insulation layer or a copper layer. A polished thickness value of the polishing layer is obtained from the plurality of region of the wafer(S620). The total polishing time interval of the polished thickness value is set(S630). A thickness profile prior to the polishing of the polishing layer is calculated from the plurality of regions of the wafer by using the polished thickness value(S640). A ratio of a time interval of the first polishing step to a time interval of the second polishing step is set in the total polishing time interval according to the polished thickness profile(S650). The polishing layer is polished according to the first and the second recipes and the set ratio of polishing time(S660).