| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pad switch capable of keeping its turn-off state, even when a voltage exceeding an internally used supply voltage is applied thereto, and capable of realizing its turn-on state, even when the connection between an internal power supply and the pad is performed at a midpoint potential. <P>SOLUTION: The semiconductor device comprises the pad; an internal power supply line; the pad switch, having a MOS transistor which couples the internal power supply line with the pad so as to be electrically connectable, by using a channel between its source and drain; and a control circuit for controlling at least one of electrical connections of a gate terminal and a back gate terminal of the MOS transistor. The control circuit is made up so as to be capable of electrically connecting the pad, with at least one of the gate terminal and the back gate terminal. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
