发明名称 METHOD FOR FABRICATING NANOCOILS
摘要 A method for fabricating nanocoils and improved nanocoils fabricated therefrom. Embodiments of the method utilizing deep reactive ion etching (DRIE). A method for fabricating nanocoils includes providing a silicon-on-insulator (SOI) wafer, in which SOI wafer includes buried oxide layer, patterning one or more devices into a layer of silicon on top of the buried oxide layer, depositing tensile stressed nitride layer on the top silicon layer, patterning coiling arm structure on top silicon layer, patterning an overlapping etch window mask on bottom side of SOI wafer using, in which patterning overlapping etch window mask removes SOI wafer and exposes buried oxide layer in width greater than coiling arm structure, and releasing coiling arm structure so that coiling arm coils to form nanocoil. In embodiments, DRIE is utilized to pattern the overlapping etch window mask.
申请公布号 WO2007038177(A3) 申请公布日期 2007.11.29
申请号 WO2006US36757 申请日期 2006.09.21
申请人 NORTHROP GRUMMAN SYSTEMS CORPORATION;STORASKA, GARRETT, A.;HOWELL, ROBERT, S. 发明人 STORASKA, GARRETT, A.;HOWELL, ROBERT, S.
分类号 D01F9/12;B82B1/00;B82B3/00 主分类号 D01F9/12
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