| 摘要 |
A transistor of a semiconductor device is provided to effectively improve an HEIP(hot electron induced punchthrough) effect by forming a source/drain region of an elevated type wherein an active region for forming a gate and an isolation layer come in contact with each other in the source/drain region. An active region is defined by an isolation layer(22) in a semiconductor substrate(21). A gate(27) is formed on the active region of the substrate. A first source/drain region(29) is formed in a portion of the substrate where the active region at both sides of the gate comes in contact with the isolation layer. A second source/drain region is formed in a portion of the active region at both sides of the gate except the first source/drain region. Spacers(31) are formed on both sidewalls of the gate. An interlayer dielectric(32) is formed on the resultant structure, covering the gate including the spacer and the first and the second source/drain regions. A contact(33) is formed in the interlayer dielectric to expose the first and the second source/drain regions. The first source/drain region is formed as an elevated type on the substrate having the gate so that the channel length in a portion where the active region comes in contact with the isolation layer is extended. A light oxide layer(28) can be interposed between the gate and the spacer. The contact can be made of tungsten or tungsten silicide.
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