| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method, comprising a read only memory which can write data at a low voltage. SOLUTION: The semiconductor device comprises a first memory cell 33 in which an orthogonal part 32a of a bit line 30 and a word line 31 is electrically connected to a bottom 40a through a first via 40, comprising a first insulating film 41 and a conductive material 42 that penetrates the first insulating film 41. It also comprises a second memory cell 34 in which the orthogonal part 32b of the bit line 30 and the word line 31 is electrically isolated but connected to a bottom 44a through a second via 44, comprising the first insulating film 41 and a second insulating film 43 which is stacked on the first insulating film 41. The first insulating film 41 having such dielectric breakdown strength lower than a reading voltage is broken down to write data "1". Then, in a thermal process, the second insulating film 43 having the dielectric breakdown strength higher than the reading voltage is self-generated to fix data "0". COPYRIGHT: (C)2008,JPO&INPIT
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