| 摘要 |
A method for manufacturing a semiconductor device is provided to restrain a void generated upon usage of an HDP(High Density Plasma) layer by using an SOG(Spin On Glass) layer when a field oxide layer is formed. A tunnel oxide layer(71), a poly silicon layer(72) for a floating gate, and a pad nitride layer(73) are formed in turn on a substrate(70). Parts of the pad nitride layer, the poly silicon layer for a floating gate, the tunnel oxide layer, and the substrate are etched to form a trench. A liner HDP layer(75) is deposited along an upper a step of the whole structure on which the trench is formed. An SOG layer(77) is applied on an upper portion of the HDP layer to gap-fill the trench. A bake process is performed and pressure is applied to the substrate in a vertical direction so that the structure of the SOG layer is uniformed by uniformly dispersing thermal gradient direction given to the SOG layer.
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