| 摘要 |
PROBLEM TO BE SOLVED: To reduce the current collapse as well as the gate leak current to improve gate breakdown voltage and reduce dark current, in a nitride semiconductor field-effect transistor having the multi-layered structure of nitride silicon film and a high dielectric film. SOLUTION: The problem can be solved by the field effect transistor constituted of nitride semiconductor and having a multi-layered structure, wherein a silicon nitride film, a silicon oxide film or an aluminum oxide film and a high dielectric film are laminated from the side of semiconductor, on the surface of semiconductor between source and drain. COPYRIGHT: (C)2008,JPO&INPIT |
