| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate where deterioration of withstand voltage is controlled. SOLUTION: The thin film transistor array substrate at one mode has a polycrystalline silicon thin film transistor having a silicon oxide film 122 formed on a TFT array substrate 103, a pattern of a polycrystalline silicon film 123 formed on the silicon oxide film 122, and a gate insulating film 124 formed on the pattern of the polycrystalline silicon film 123. A cut amount of the silicon oxide film 122 is protruded from the pattern of the polycrystalline silicon film 123, and is 10 nm or below in a direction perpendicular to the TFT array substrate 103. COPYRIGHT: (C)2008,JPO&INPIT
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