| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting diode which achieves low operation voltage, high output, and a long life. <P>SOLUTION: In the nitride semiconductor light emitting diode, at least an n-type foundation layer (4), a strain relaxing layer (11), an InGaN buffer layer (12), a light emitting layer (6) which contains an InGaN quantum well and has a peak wavelength of 440 nm or more and p-type layers (6, 7) are laminated on a substrate (1). Strain of the light emitting layer (6) is reduced and piezoelectirc field is reduced by providing the strain relaxing layer (11) and the InGaN buffer layer (12) between the n-type foundation layer (4) and the light emitting layer (6). <P>COPYRIGHT: (C)2008,JPO&INPIT |
