| 摘要 |
PROBLEM TO BE SOLVED: To perform ion implantation in which an ion proportion with valence conversion is significantly reduced by directly attaching a cryopump in a part which needs exhaust without providing piping, and fully exhibiting a high exhaust speed of the cryopump. SOLUTION: In an ion implantation method, a cryopump 1 is provided in the middle of a beam line case 2 which leads an ion beam extracted from an ion source to an end station 15 in which a substrate to which a resist is applied is installed. Pressure in the case 2 is reduced by performing the differential pumping of gas discharged from the resist. Thereby, the ion proportion with valence conversion by an ion collision is reduced to 1/10 or lower, and the ion implantation is performed. The cryopump 1 is provided with a shield 6 cooled to an ultralow temperature which extends in the direction that intersects a beam line central axis 10 provided inside the side surface of the beam line case, a baffle 9 coupled to the shield which is arranged in the same direction within the shield, and cryopanels 8 cooled to an extremely low temperature which are arranged into multistages and a plurality of lines in the same direction between the shield and the baffle. COPYRIGHT: (C)2008,JPO&INPIT
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