发明名称 SEMICONDUCTOR DEVICE HAVING LOW DIELECTRIC INSULATING FILM AND MANUFACTURING METHOD OF THE SAME
摘要 <p>A semiconductor device includes a semiconductor substrate and low dielectric film wiring line laminated structure portions which are provided in regions on the semiconductor substrate except a peripheral portion thereof. Each of the laminated structure portions has a laminated structure of low dielectric films and a plurality of wiring lines. An insulating film is provided on an upper side of the laminated structure portion. Connection pad portions for electrodes are arranged on the insulating film to be electrically connected to the connection pad portions of uppermost wiring lines of the laminated structure portion. Bump electrodes for external connection are provided on the connection pad portions for the electrodes. A sealing film is provided on the insulating film and on the peripheral portion of the semiconductor substrate. Side surfaces of the laminated structure portions are covered with the insulating film or the sealing film.</p>
申请公布号 WO2007135763(A1) 申请公布日期 2007.11.29
申请号 WO2006JP325131 申请日期 2006.12.11
申请人 CASIO COMPUTER CO., LTD.;MIZUSAWA, AIKO;OKADA, OSAMU;WAKABAYASHI, TAKESHI 发明人 MIZUSAWA, AIKO;OKADA, OSAMU;WAKABAYASHI, TAKESHI
分类号 H01L23/485 主分类号 H01L23/485
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