NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

An NVM(non-volatile memory) device is provided to decrease an electric field formed in a blocking insulation layer in a write/erase operation and improve a write/erase speed by using a high dielectric layer in the blocking insulation layer. A tunnel oxide layer(60) is formed on a semiconductor substrate(50). A charge trap layer(70) is formed on the tunnel insulation layer. A blocking insulation layer(110) is formed on the charge trap layer. A gate electrode(100) is formed on the blocking insulation layer. The blocking insulation layer has a stack structure of a high dielectric layer(90) and a barrier insulation layer(80) which has a higher energy barrier with respect to the charge trap layer than that with respect to the high dielectric layer. The barrier insulation layer has a thickness of 5~15 Å. The barrier insulation layer can be a silicon oxide layer. The charge trap layer may be a silicon nitride layer and the barrier insulation layer may be a silicon oxide layer which is formed by oxidizing an upper part of the silicon nitride layer.