| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a CMOS thin-film transistor of which process is simplified by minimizing the residual quantity of a metal catalyst remaining in a semiconductor layer, and by reducing the number of masks. SOLUTION: The manufacturing method of the CMOS thin-film transistor includes a step for performing first heat treatment to diffuse the metal catalyst onto the interface of an amorphous silicon layer via a capping layer, and for crystallizing the amorphous silicon layer to a polycrystalline silicon layer by the diffused metal catalyst; a step for patterning the polycrystalline silicon layer to form first and second semiconductor layers 132, 134; a step for doping the first and second semiconductor layers 132, 134 with a first impurity; a step for doping the first semiconductor layer 132 with a second impurity; and a step for performing second heat treatment to remove the metal catalyst remaining in the first semiconductor layer 132 doped with the second impurity. COPYRIGHT: (C)2008,JPO&INPIT |
