| 摘要 |
A semiconductor device is provided to improve reliability to perform a fuse program with a low blow-out current without an additional interconnection line process. A semiconductor device has a plurality of metal interconnection line layers, an internal circuit and at least one fuse program circuit. The internal circuit includes a transistor device wire-interconnected using an interconnection line of the plurality of metal interconnection line layers. The fuse program circuit includes a fuse element(FS) and a fuse transistor element(CTr). The fuse element is formed by using an interconnection line of an interconnection line layer above a first metal interconnection line layer of the plurality of metal interconnection line layers. The fuse transistor element is serially connected to the fuse element, and flows a current to blow out the fuse element selectively. The fuse program circuit stores information related with the internal circuit according to the blown-out state of the fuse element set according to fuse program information. |
