| 摘要 |
PROBLEM TO BE SOLVED: To provide technology capable of improving production yield of a semiconductor product having an aluminum wire with an aluminum film formed on a titanium/titanium nitride laminate film. SOLUTION: A manufacturing method of a semiconductor device includes a step of introducing an inert gas containing no nitrogen into a chamber 65 for forming a barrier metal film for sputtering in the chamber 65 to deposit a titanium film on a shutter, a step of moving the shutter to a storage place provided in the chamber 65 and thereafter placing a semiconductor wafer SW in the chamber 65, a step of introducing the inert gas containing no nitrogen into the chamber 65 for depositing the titanium film on a principal plane of the semiconductor wafer SW, a step of introducing an inert gas containing nitrogen into the chamber 65 for sputtering and depositing a titanium nitride film on the titanium film, and a step of introducing the inert gas into a chamber 66 for forming an aluminum film for sputtering in the chamber 66 to deposit an aluminum film on the titanium nitride film. COPYRIGHT: (C)2008,JPO&INPIT
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